J210 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
J210 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
VGSS
IDSS
IGSS
yfs
yos
gate-source breakdown voltage
gate-source cut-off voltage
J210
J211
J212
gate-source forward voltage
drain current
J10
J11
J12
reverse gate leakage current
common-source transfer admittance
J210
J211
J212
common source output admittance
J210
J211
J212
CONDITIONS
IG = −1 µA; VDS = 0
ID = 1 nA; VDS = 15 V
IG = 0; VDS = 0
VGS = 0; VDS = 15 V
VGS = −15 V; VDS = 0
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
MIN.
−
MAX.
−25
UNIT
V
−1
−3
V
−2.5
−4.5
V
−4
−6
V
−
1
V
2
15
mA
7
20
mA
15
40
mA
−
−100
pA
4
12
mS
6
12
mS
7
12
mS
−
150
µS
−
200
µS
−
200
µS
DYNAMIC CHARACTERISTICS
Tamb = 25 °C.
SYMBOL
PARAMETER
Cis
input capacitance
Cos
output capacitance
Crs
feedback capacitance
gis
common source input conductance
gfs
common source transfer conductance
grs
common source feedback conductance
gos
common source output conductance
Vn
equivalent input noise voltage
CONDITIONS
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
TYP.
2
4
0.8
2
0.8
0.9
70
1.1
7.5
7.5
−8
−90
95
200
5
UNIT
pF
pF
pF
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
1997 Dec 01
4
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