2SC5090 View Datasheet(PDF) - Toshiba
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2SC5090 Datasheet PDF : 7 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5090
2SC5090
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
V
10
V
1.5
V
20
mA
40
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7
10
⎯ GHz
10
13
⎯
dB
⎯
7
⎯
⎯
1.1
2.5
dB
⎯
1.7
⎯
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
⎯
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
⎯
DC current gain
hFE
VCE = 8 V, IC = 20 mA
50
(Note 1)
Output capacitance
Reverse transfer capacitance
Cob
⎯
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
⎯
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
⎯
1
μA
⎯
1
μA
⎯
160
0.7
⎯
pF
0.5 0.95 pF
2007-11-01
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