2SC1569 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SC1569

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC1569

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0

300

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA

1.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 100mA; IB= 20mA

1.2

V

ICBO

Collector Cutoff Current

VCB= 100V ; IE= 0

1.0 μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0 μA

hFE

COB

fT

www.iscsemi.cn DC Current Gain

IC= 50mA ; VCE= 10V

40

Output Capacitance

IE= 0; VCB= 50V; ftest= 1MHz

Current-Gain—Bandwidth Product

IC= 30mA; VCE= 10V

40

5

170

pF

MHz

isc Website：www.iscsemi.cn

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