2SA1939 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
2SA1939 Datasheet PDF : 2 Pages
1
2
Silicon PNP Power Transistor
2SA1939
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0
-80
V
VcE(sat)
Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
VeEton) Base-Emitter On Voltage
lc= -3A; VCE= -5V
IGBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-2.0 V
-1.5 V
-5
nA
-5
uA
hpE-1
DC Current Gain
lc=-1A;Vce=-5V
55
160
hFE-2
DC Current Gain
lc= -3A; VCE= -5V
35
COB
Output Capacitance
IE=0;VCB= -10V; ftest= 1.0MHz
180
pF
fr
Current-Gain—Bandwidth Product
IG=-1A;VCE=-5V
30
MHz
• hpE-1 Classifications
R
0
55-110
80-160
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