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2SA1939 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
2SA1939
NJSEMI
New Jersey Semiconductor NJSEMI
2SA1939 Datasheet PDF : 2 Pages
1 2
J.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L)nc.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1939
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(«t)= -2.0V(Min) @lc= -5A
• Good Linearity of MFE
• Complement to Type 2SC51 96
APPLICATIONS
• Power amplifier applications
• Recommend for 40W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ I c-25 C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.6
A
60
W
150
'C
-55-150 °c
I1
r+
i
' 23
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3R package
m•—•— H B —»_! -*- C (*-
w$\ *I.
'
G
t-1>
r in° K, T T } i
q^ [
- 'V !
I/ "
J
i .f
K
tri
Mu
U-N
mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.40 4.60
D 0.90 1.10
f 3.20 3.40
H 2.90 3.10
J 0.50 0.70
K 19.90 20.10
L 1.90 2.10
N 10.80 11.00
U 4.40 4.60
N 3.30 3.35
S 1.40 1.60,
T 1.00 1.20
I) 2.10 2.30
Z 8.90 9.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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