2SA1667 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SA1667

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1667

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V(Min)

·DC Current Gain-

: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A)

·Complement to Type 2SC4381

APPLICATIONS

·Designed for TV vertical output ,audio output driver and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-2

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-1

A

25

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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