JAN1N5418US View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
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JAN1N5418US
Microsemi Corporation
JAN1N5418US Datasheet PDF : 3 Pages
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SCOTTSDALE DIVISION
1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded packages for thru-hole mounting by deleting the “US”
suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Package “E”
or D-5B
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5415 to 1N5420 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 50 to 600 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
• Axial-leaded equivalents also available (see separate
data sheet for 1N5415 thru 1N5420)
• Fast recovery 3 Amp rectifiers 50 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Thermal Resistance: 10oC/W junction to endcap
• Thermal Impedance: 1.5oC/W @ 10 ms heating time
• Average Rectified Forward Current (IO): 3 Amps @
TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1)
• Forward Surge Current (8.3 ms half sine): 80 Amps
• Solder temperatures: 260oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
• MARKING: Cathode band only
• POLARITY: Cathode indicated by band
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 539 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
MINIMUM
FORWARD
MAXIMUM
MAXIMUM
AVERAGE
BREAKDOWN
VOLTAGE
REVERSE
REVERSE
RECTIFIED
TYPE
VRWM
VOLTAGE
VBR @ 50µA
VOLTS
VF @ 9 A
MIN.
VOLTS
MAX.
VOLTS
CURRENT
IR @ VRWM
25oC
100oC
µA
µA
RECOVERY
TIME trr
(NOTE 2)
ns
CURRENT IO
(NOTE 1)
55oC
100oC
AMPS AMPS
1N5415US
50V
55V
0.6
1.5
1.0
20
150
3.0
2.0
1N5416US
100V
110V
0.6
1.5
1.0
20
150
3.0
2.0
1N5417US
200V
220V
0.6
1.5
1.0
20
150
3.0
2.0
1N5418US
400V
440V
0.6
1.5
1.0
20
150
3.0
2.0
1N5419US
500V
550V
0.6
1.5
1.0
20
250
3.0
2.0
1N5420US
600V
660V
0.6
1.5
1.0
20
400
3.0
2.0
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright 2004
11-22-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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