J111(2001) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
J111 Datasheet PDF : 13 Pages
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J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
G
G
SD
TO-92
N-Channel Switch
S
SOT-23 D
Mark: 6P / 6R / 6S
NOTE: Source & Drain
are interchangeable
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
V
- 35
50
V
mA
5
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
J111-113
625
5.0
125
357
Max
*MMBFJ111-113
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
2001 Fairchild Semiconductor Corporation
J111/112/113/MMBFJ111/112/113, Rev A
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