BT134W-600E View Datasheet(PDF) - NXP Semiconductors.
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BT134W-600E Datasheet PDF : 16 Pages
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WeEn Semiconductors
BT134W-600E
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 9
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 10
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 10
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 10
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 10
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 11
VT
on-state voltage
IT = 2 A; Tj = 25 °C; Fig. 12
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 13
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 13
ID
off-state current
Dynamic characteristics
VD = 600 V; Tj = 125 °C
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
tgt
gate-controlled turn-on ITM = 1.5 A; VD = 600 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
Min Typ Max Unit
-
2.5 10
mA
-
4
10
mA
-
5
10
mA
-
11
25
mA
-
3
15
mA
-
10
20
mA
-
2.5 15
mA
-
4
20
mA
-
2.2 15
mA
-
1.2 1.5 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
-
30
-
V/µs
-
2
-
µs
BT134W-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 June 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
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