4NK60Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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4NK60Z Datasheet PDF : 28 Pages
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STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
2
Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
Zero gate voltage
IDSS drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID =1 mA, VGS = 0
600
VDS = Max rating
VDS = Max rating, TC = 125 °C
V
1 µA
50 µA
VGS = ± 20 V
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 2 A
± 10 µA
3 3.75 4.5 V
1.76 2 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15 V, ID = 2 A
3
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
VDS = 25 V, f = 1 MHz,
Reverse transfer capacitance VGS = 0
510
pF
67
pF
13
pF
Coss eq. (2)
Equivalent output
capacitance
VDS =0, VDS = 0 to 480 V
38.5
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
12
ns
9.5
ns
29
ns
16.5
ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 480 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
12
ns
12
ns
19.5
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 4 A,
VGS = 10 V
(see Figure 18)
18.8 26 nC
3.8
nC
9.8
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Doc ID 8882 Rev 7
5/28
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