G04N60P View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

G04N60P

Fast IGBT in NPT-technology

Infineon Technologies 

SGP04N60

SGD04N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=4A,

VGE=0/15V,

R G =67Ω ,

Lσ1) =180nH,

Cσ1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

22

15

237

70

0.070

0.061

0.131

26 ns

18

284

84

0.081 mJ

0.079

0.160

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V, IC=4A,

VGE=0/15V,

RG=67Ω,

Lσ1) =180nH,

Cσ1) =180pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

22

16

264

104

0.115

0.111

0.226

26 ns

19

317

125

0.132 mJ

0.144

0.277

1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

3

Rev. 2.2 Sep 07

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