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Z0103MA1AA2(2019) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
Z0103MA1AA2
(Rev.:2019)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z0103MA1AA2 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Z01
Characteristics (curves)
Figure 5. Relative variation of holding current and
latching current versus junction temperature (typ. values)
2.5 IH, IL [ Tj] /IH, IL [Tj=25°C]
Figure 6. Relative variation of gate trigger current (IGT)
and voltage (VGT) versus junction temperature
IGT, V GT[T j] / IGT, V GT[T j=25 ° C]
3.0
2.0
1.5
1.0
IL
0.5
Tj (°C)
IH
0.0
-50
-25
0
25
50
75
100
125
2.5
IGT Q1-Q2
2.0
IGT Q3
IGT Q4
1.5
1.0 VGT Q1-Q2-Q3-Q4
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
Figure 7. Surge peak on-state current versus number of
cycles
9 ITSM(A)
8
7
6
5
4
3
2
Repetitive
1 Tamb = 95 °C
0
1
Non repetitive
Tjinitial = 25 °C
10
T = 20 ms
One cy cle
Number of cycles
100
1000
Figure 8. Non-repetitive surge peak on-state current and
corresponding value of I2t sinusoidal pulse width
ITSM (A), I2t (A2s )
100. 0
dI/dt li mi tati on :
20A/µs
10. 0
Tj initial = 25°C
ITSM
1. 0
0. 1
0. 01
tp ( ms )
0. 10
1. 00
I2t
10. 00
Figure 9. On-state characteristics (maximum values) (ITM Figure 10. Relative variation of critical rate of decrease of
= f(VTM)
main current (dI/dt) versus junction temperature
ITM(A)
10.0
Tj = Tjmax.
1.0
Tj = 25°C
Tj=max.
Vt0=0.95 V
Rd=400 mΩ
VTM (V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(dI/dt )c [(d V/dt )c] / Specifie d (dI/dt )c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Z0103
Z0107
(dV/dt )c (V/µs)
Z0109
Z0110
1 .0
10.0
100. 0
DS2116 - Rev 11
page 5/16
 

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