STA339BWTR View Datasheet(PDF) - STMicroelectronics
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STA339BWTR
STMicroelectronics
STA339BWTR Datasheet PDF : 78 Pages
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Electrical specifications
STA339BW
3.5
Electrical specifications for the power section
The specifications given in this section are valid for the operating conditions: VCC = 18 V,
f = 1 kHz, fsw = 384 kHz, Tamb = 25° C and RL = 8 , unless otherwise specified.
Symbol
Table 7. Electrical specifications - power section
Parameter
Conditions
Min Typ Max Unit
Po
RdsON
gP
gN
Idss
ILDT
IHDT
tr
tf
VCC
Ivcc
Ivdd
Ilim
Isc
UVL
tmin
DR
SNR
PSSR
Output power BTL
THD = 1%
-
THD = 10%
-
Output power SE
THD = 1%
-
THD = 10%
-
Power Pchannel/Nchannel MOSFET
(total bridge)
ld = 1.5 A
-
Power Pchannel RdsON matching
Power Nchannel RdsON matching
Power Pchannel/Nchannel leakage
Low current dead time (static)
High current dead time (dynamic)
Rise time
Fall time
ld = 1.5 A
95
ld = 1.5 A
95
VCC = 20 V
-
Resistive load(1)
-
Iload = 1.5 A(1)
-
Resistive load(1)
-
Resistive load(1)
-
Supply voltage operating voltage
-
5
Supply current from VCC in power down
Supply current from VCC in operation
PWRDN = 0
-
PCM Input signal = -
60 dBfs,
Switching frequency -
= 384 kHz,
No LC filters
Supply current FFX processing (reference Internal clock =
only)
49.152 MHz
-
Overcurrent limit
(2)
3.0
Short circuit protection
Hi-Z output
3.8
Undervoltage protection
-
-
Output minimum pulse width
No load
20
Dynamic range
-
-
Signal to noise ratio, ternary mode
A-weighted
-
Signal to noise ratio binary mode
-
-
Power supply rejection ratio
FFX stereo mode,
<5 kHz
VRIPPLE = 1 V RMS -
Audio input =
dither only
16
-
W
20
-
4
-
W
5
-
180 250 m
-
-
%
-
-
%
-
10
A
8
15
ns
15
30
ns
10
18
ns
10
18
ns
-
26
V
0.1
1
mA
52
60
mA
55
70
mA
3.8
4.0
A
4.8
-
A
3.5
4.3
V
30
60
ns
100 -
dB
100 -
dB
90
-
dB
80
-
dB
16/78
DocID15251 Rev 7
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