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BUZ102S View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ102S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 102S
SIPMOSPower Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
dv/dt rated
175 ˚C operating temperature
VDS
55 V
RDS(on) 0.018
ID
52 A
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package Ordering Code
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Packaging
Tube
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at Tj = 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 ˚C
TC = 100 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 52 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 52 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
52
37
208
245
12
6
Unit
A
mJ
kV/µs
±20
V
120
W
-55... +175
˚C
55/175/56
Data Book
1
05.99
 

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