K100F06K View Datasheet(PDF) - Toshiba
Part Name
Description
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K100F06K Datasheet PDF : 7 Pages
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Electrical Characteristics (Ta = 25°C)
TK100F06K3
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS VGS = ±20 V, VDS = 0 V
IDSS VDS = 40 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
V (BR) DSX ID = 10 mA, VGS = −20 V
Vth
VDS = 10 V, ID = 1 mA
RDS (ON) VGS = 10 V, ID = 50 A
⎪Yfs⎪ VDS = 10 V, ID = 50 A
Ciss
Crss
VDS = 10V, VGS = 0 V, f = 1 MHz
Coss
⎯
⎯ ±10 μA
⎯
⎯
10
μA
60
⎯
⎯
V
35
⎯
⎯
3.0
⎯
4.0
V
⎯
4.0 5.0 mΩ
87
174
⎯
S
⎯ 4500 ⎯
⎯
600 ⎯
pF
⎯ 800 ⎯
tr
10 V
VGS
0V
ton
⎯
18
⎯
ID = 50 A
VOUT
⎯
33
⎯
RL = 0.6 Ω
ns
tf
VDD ≈ 30 V
Duty ≤ 1%, tw = 10 μs
toff
⎯
23
⎯
⎯
73
⎯
Qg
Qgs
VDD ≈ 48 V, VGS = 10 V, ID = 100 A
Qgd
⎯
98
⎯
⎯
57
⎯
nC
⎯
41
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
⎯
⎯
IDR = 100 A, VGS = 0 V
IDR = 100 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯
⎯
100
A
⎯
⎯
300
A
⎯
⎯
−1.2
V
⎯
62
⎯
ns
⎯
62
⎯
nC
Marking
K100F06K
3
Part No.
(or abbreviation code)
Lot No.
Note 6
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
2
2009-04-17
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