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K100F06K View Datasheet(PDF) - Toshiba

Part Name
Description
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K100F06K Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F06K3
Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.)
High forward transfer admittance: |Yfs| = 174 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
60
V
60
V
±20
V
100
A
300
180
W
81
mJ
100
A
18
mJ
175
°C
55 to 175
°C
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
1.1
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
8.0
JEDEC
JEITA
TOSHIBA
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
1
Thermal resistance, channel to case
Rth (ch-c)
0.83
°C/W
Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 11 μH, RG = 25 Ω, IAR = 100 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
1
2009-04-17
 

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