STP130N10F3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STP130N10F3

N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages

STMicroelectronics 

Electrical characteristics

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Symbol

On/off states

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 250 µA

IDSS

IGSS

VGS(th)

Zero gate voltage drain

current

VGS = 0, VDS= 100 V

TC=25°C

TC=125°C

Gate body leakage current VDS = 0, VGS = ±20 V

Gate threshold voltage VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 23A

TO-220FP and I²PAKFP

VGS= 10 V, ID= 60 A

H²PAK

TO-220

Min. Typ. Max. Unit

100

-

V

-

10

µA

100 µA

-

±200 nA

2

-

4

V

8

9.6

mΩ

7.8 9.3

8

9.6

Table 5. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

VGS = 0, VDS = 25 V,

f = 1 MHz

VDD = 50 V, ID = 120 A,

VGS = 10 V

(see Figure 20)

Min. Typ. Max. Unit

3305

pF

-

373

-

pF

23

pF

57

nC

-

22

-

nC

17

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 50 V, ID = 60 A

RG = 4.7 Ω VGS = 10 V

(see Figure 19,

Figure 24)

Min. Typ. Max. Unit

17

ns

38

ns

-

-

52

ns

7.2

ns

4/23

Doc ID 018492 Rev 3

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