STP12NK60Z View Datasheet(PDF) - STMicroelectronics
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Description
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STP12NK60Z
STMicroelectronics
STP12NK60Z Datasheet PDF : 15 Pages
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Electrical characteristics
STP12NK60Z, STF12NK60Z, STW12NK60Z
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
600
V
VDS = Max rating
VDS = Max rating, TC=125 °C
1 µA
50 µA
VGS = ± 20 V
±10 µA
VDS = VGS, ID = 100 µA
3 3.75 4.5 V
VGS = 10 V, ID = 5 A
0.53 0.64 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=10 V, ID = 5 A
VDS = 25 V, f = 1 MHz,
VGS = 0
-
9
-S
1740
pF
- 195 - pF
49
pF
Coss eq. (2)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
- 101 - pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 5 A,
RG=4.7 Ω
VGS = 10 V
(see Figure 19)
22.5
ns
18.5
ns
-
-
55
ns
31.5
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 10 A,
VGS = 10 V
(see Figure 20)
59
nC
- 10 - nC
32
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/15
Doc ID 11324 Rev 7
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