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NE5550779A View Datasheet(PDF) - Renesas Electronics
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NE5550779A
Silicon Power LDMOS FET
Renesas Electronics
NE5550779A Datasheet PDF : 17 Pages
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NE5550779A
PACKAGE DIMENSIONS
79A (UNIT: mm)
4.2 MAX.
Source
Gate
Drain
(Bottom View)
1.5±0.2
Source
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 14 of 15
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