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NE5550779A-T1A View Datasheet(PDF) - Renesas Electronics

Part Name
Description
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NE5550779A-T1A
Renesas
Renesas Electronics Renesas
NE5550779A-T1A Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
NE5550779A
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –5 to 30 dBm
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
80
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
35
Pout - 7.5 V
70
Pout - 9 V
ηadd - 3.6 V
30
ηadd - 4.5 V
60
ηadd - 6.0 V
ηadd - 7.5 V
25
ηadd - 9 V
50
20
40
15
30
10
20
5
10
0
–10 –5
0 5 10 15 20 25 30
Input Power Pin (dBm)
0
35
POWER GAIN, DRAIN CURRENT
vs. INPUT POWER
30
1.8
GP - 3.6 V
GP - 4.5 V
GP - 6 V
GP - 7.5 V
25
GP - 9 V
1.5
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
20
IDS - 7.5 V
IDS - 9 V
1.2
15
0.9
10
0.6
5
0.3
0
–10 –5
0
0 5 10 15 20 25 30 35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 11 of 15
 

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