datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :

K1109-J32-AE3-R View Datasheet(PDF) - Unisonic Technologies

Part NameK1109-J32-AE3-R UTC
Unisonic Technologies UTC
DescriptionN-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE
K1109-J32-AE3-R Datasheet PDF : 3 Pages
1 2 3
K1109
N-CHANNEL JFET
„ ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSX
20
V
Gate-Drain Voltage
VGDO
-20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PD
80
mW
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain Current
Gate Off Voltage
Forward Transfer Admittance
Input Capacitance
Noise Voltage
„ CLASSIFICATION OF IDSS
RANK
RANGE
J32
40-70
SYMBOL
IDSS
VGS(OFF)
lYFSl
CISS
NV
TEST CONDITIONS
VDS=5.0V, VGS=0
VDS=5.0V, ID=1.0μA
VDS=5.0V, VGS=0, f=1kHz
VDS=5.0V, VGS=0, f=1.0MHz
MIN TYP MAX UNIT
40
600 μA
-0.1
-1.0 V
600 1600
μS
7.0 8.0 pF
1.8 3.0 V
J33
60-110
J34
90-180
J35
150-300
J36
200-450
J37
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-009.Ga
Direct download click here

■ DESCRIPTION
The UTC K1109 is N-channel JFET for electrets condenser microphone.

■ FEATURES
* High GM Implies Low Transfer loss
* Built-In Gate-Source Diode and Resistor Implies Fast Power on Settling Time

Share Link : UTC

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]