CAT28F512 View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part Name

Description

View to exact match

CAT28F512

512K-Bit CMOS Flash Memory

Catalyst Semiconductor => Onsemi 

CAT28F512

512K-Bit CMOS Flash Memory

Licensed Intel second source

FEATURES

I Fast Read Access Time: 90/120/150 ns

I Low Power CMOS Dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 µA max (CMOS levels)

I High Speed Programming:

–10 µs per byte

–1 Sec Typ Chip Program

I 12.0V ± 5% Programming and Erase Voltage

I Electronic Signature

DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and EEPROM devices. Programming and Erase

are performed through an operation and verify algo-

rithm. The instructions are input via the I/O bus, using a

ALOGEN FR

LEAD

F

R

E

E

TM

I Commercial, Industrial and Automotive

Temperature Ranges

I Stop Timer for Program/Erase

I On-Chip Address and Data Latches

I JEDEC Standard Pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

I 100,000 Program/Erase Cycles

I 10 Year Data Retention

I "Green" Package Options Available

two write cycle scheme. Address and Data are latched

to free the I/O bus and address bus during the write

operation.

The CAT28F512 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

BLOCK DIAGRAM

ERASE VOLTAGE

SWITCH

I/O0–I/O7

I/O BUFFERS

WE

CE

OE

A0–A15

COMMAND

REGISTER

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

DATA SENSE

LATCH AMP

VOLTAGE VERIFY

SWITCH

Y-DECODER

X-DECODER

Y-GATING

524,288 BIT

MEMORY

ARRAY

© 2004 by Catalyst Semiconductor, Inc.

Characteristics subject to change without notice

1

Doc. No. 1084, Rev. H

Share Link: