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MV2N5115 View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
MV2N5115
Microsemi
Microsemi Corporation Microsemi
MV2N5115 Datasheet PDF : 5 Pages
1 2 3 4 5
2N5114 thru 2N5116
Available on
commercial
versions
P-CHANNEL J-FET
DESCRIPTION
This leaded device is available in high-reliability equivalents for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applications.
Screening in
reference to
MIL-PRF-19500
available
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Surface mount equivalent to JEDEC registered 2N5116.
Screening in reference to MIL-PRF-19500 is available. (See part nomenclature.)
RoHS compliant versions available (commercial grade only).
TO-18 (TO-206AA)
Package
Leaded TO-18 package.
Lightweight.
APPLICATIONS / BENEFITS
Also available in:
UB package
(surface mount)
2N5114UB – 2N5116UB
MAXIMUM RATINGS @ TC = +25oC unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Gate-Source Voltage (1)
Drain-Source Voltage
Drain-Gate Voltage (1)
Gate Current
Steady-State Power Dissipation @ TA = +25 oC (2)
Symbol
TJ and TSTG
V GS
V DS
V DG
IG
PD
Value
-65 to +200
30
30
30
50
0.500
Unit
oC
V
V
V
mA
W
Notes: 1. Symmetrical geometry allows operation of those units with source / drain leads interchanged.
2. Derate linearly 3.0 mW/°C for TA > +25°C.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0006, Rev. 2 (111983)
©2011 Microsemi Corporation
Page 1 of 5
 

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