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ME4435 View Datasheet(PDF) - Unspecified

Part Name
Description
View to exact match
ME4435
ETC
Unspecified ETC
ME4435 Datasheet PDF : 5 Pages
1 2 3 4 5
P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4435 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4435
FEATURES
-30V/-9.1A,RDS(ON)=20m@VGS=-10V
-30V/-6.9A,RDS(ON)=35m@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(tJ=150)
TA=70
Pulsed Drain Current
Avalanche Energy with Single Pulse(L=0.1mH)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
VDSS
VGSS
ID
IDM
EAS
IS
PD
TJ
RθJA
RθJC
-30
±20
-9.1
-7
-7.3
-5.6
-30
50
-2.1
-1.25
2.5
1.5
1.6
0.9
-55 to 150
T≦10 sec
30
Steady State
62
38
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
mJ
A
W
℃/W
℃/W
Mar,2007-Ver4.0
01
 

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