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Q0465R View Datasheet(PDF) - Fairchild Semiconductor

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Q0465R Datasheet PDF : 24 Pages
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SENSEFET SECTION
BVDSS Drain Source Breakdown Voltage
IDSS
Zero-Gate-Voltage Drain Current
RDS(ON) Drain-Source On-State Resistance
COSS Output Capacitance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CONTROL SECTION
tON.MAX
tB
tW
fS
ΔfS
tAVS
VAVS
Maximum On Time
Blanking Time
Detection Time Window
Initial Switching Frequency
Switching Frequency Variation(11)
AVS Triggering
Threshold(11)
On Time
Feedback
Voltage
tSW
Switching Time Variance by AVS(11)
IFB
Feedback Source Current
DMIN
Minimum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
tS/S
Internal Soft-Start Time
VOVP Over-Voltage Protection
BURST-MODE SECTION
VBURH
VBURL
Hysteresis
Burst-Mode Voltages
Condition
Min. Typ. Max. Unit
VCC = 0V, ID = 100µA
VDS = 560V
TJ = 25°C, ID = 0.5A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
650
V
250 µA
2.2 2.6 Ω
60
pF
12
ns
20
ns
30
ns
16
ns
TJ = 25°C
TJ = 25°C, Vsync = 5V
TJ = 25°C, Vsync = 0V
-25°C < TJ < 85°C
at VIN = 240VDC, Lm = 360μH
(AVS triggered when VAVS >
spec. and tAVS < spec.)
Sync = 500kHz sine input
VFB = 1.2V, tON = 4.0µs
VFB = 0V
VFB = 0V
After turn-on
With free-running frequency
8.8 10.0 11.2 µs
13.5 15.0 16.5 µs
6.0
µs
59.6 66.7 75.8 kHz
±5 ±10 %
4.0
µs
1.2
V
13.5
20.5 µs
700 900 1100 µA
0%
11 12 13 V
7
8
9
V
17.5
ms
18 19 20 V
TJ = 25°C, tPD = 200ns(10)
0.45 0.55 0.65 V
0.25 0.35 0.45 V
200
mV
Continued on the following page...
© 2008 Fairchild Semiconductor Corporation
FSQ0465RS/RB Rev. 1.0.1
6
www.fairchildsemi.com
 

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