2SA1306O View Datasheet(PDF) - Unspecified

Part Name

Description

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2SA1306O

Silicon PNP Power Transistors

Unspecified 

Product Specification

Silicon PNP Power Transistors

www.jmnic.com

2SA1306 2SA1306A 2SA1306B

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1306

2SA1306A

2SA1306B

IC=10mA , IB=0

VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA

VBE

Base-emitter voltage

IC=-0.5A ,VCE=-5V

ICBO

Collector cut-off current

VCB=-160V, IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.1A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

fT

Transition frequency

IC=-0.1A ; VCE=-10V

MIN TYP. MAX UNIT

-160

-180

V

-200

-1.5

V

-1.0

V

-1.0

μA

-1.0

μA

70

240

30

pF

100

MHz

hFE Classifications

O

Y

70-140

120-240

JMnic

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