STP14NK50Z View Datasheet(PDF) - Unspecified

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STP14NK50Z

N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET

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STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z Electrical charac-

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

ID = 1mA, VGS= 0

VDS = Max rating,

VDS = Max rating, TC

=125°C

VGS = ±20V

VDS= VGS, ID = 100µA

VGS= 10V, ID= 6A

Min. Typ. Max. Unit

500

V

1

µA

50 µA

±10 nA

3 3.75 4.5 V

0.34 0.38 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =8V, ID = 6A

12

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

2000

pF

238

pF

55

pF

Coss

(2)

eq .

Equivalent output

capacitance

VGS=0, VDS =0V to 400V

150

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=400V, ID = 12A

VGS =10V

69 92 nC

12

nC

31

nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Table 7. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

Test conditions

VDD=250 V, ID=6A,

RG=4.7Ω, VGS=10V

(see Figure 19)

Min. Typ. Max. Unit

24

ns

16

ns

5/19

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