Philips Semiconductors
Silicon RF switches
Product specification
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
FET and diode
s21(on)2 losses (on-state)
VSC = VDC = 0; RS = RL = 50 Ω;
IF = 0; note 1; f ≤ 1 GHz
−
−
2
dB
VSC = VDC = 0; RS = RL = 50 Ω; IF = 0;
−
1.3 −
dB
f = 1 GHz
VSC = VDC = 0; RS = RL = 75 Ω; IF = 0;
−
−
3
dB
f ≤ 1 GHz
s21(off)2 isolation (off-state)
VSC = VDC = 5 V; RS = RL = 50 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−
−
dB
VSC = VDC = 5 V; RS = RL = 50 Ω;
IF = 1 mA; f = 1 GHz
−
38
−
dB
VSC = VDC = 5 V; RS = RL = 75 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−
−
dB
RDSon
drain-source on-resistance VCS = 0; ID = 1 mA
−
12
20
Ω
Cic
input capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
−
1
−
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
−
0.65 0.9 pF
Coc
output capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
−
1
−
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
−
0.65 0.9 pF
Diode
Cd
diode capacitance
f = 1 MHz; VR = 0
rD
diode forward resistance IF = 2 mA; f = 100 MHz; note 3
−
1.1 −
pF
−
−
0.7 Ω
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
d
s
handbook, halfpage
s
d
g, a
c
SOT143B
MBL027
c
g, a
SOT143R
Fig.3 Simplified diagram.
1999 Nov 18
4