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BF1108 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF1108
Philips
Philips Electronics Philips
BF1108 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon RF switches
Product specification
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
FET and diode
s21(on)2 losses (on-state)
VSC = VDC = 0; RS = RL = 50 ;
IF = 0; note 1; f 1 GHz
2
dB
VSC = VDC = 0; RS = RL = 50 ; IF = 0;
1.3
dB
f = 1 GHz
VSC = VDC = 0; RS = RL = 75 ; IF = 0;
3
dB
f 1 GHz
s21(off)2 isolation (off-state)
VSC = VDC = 5 V; RS = RL = 50 ;
IF = 1 mA; f 1 GHz
30
dB
VSC = VDC = 5 V; RS = RL = 50 ;
IF = 1 mA; f = 1 GHz
38
dB
VSC = VDC = 5 V; RS = RL = 75 ;
IF = 1 mA; f 1 GHz
30
dB
RDSon
drain-source on-resistance VCS = 0; ID = 1 mA
12
20
Cic
input capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
1
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
0.65 0.9 pF
Coc
output capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
1
pF
VSC = VDC = 0; IF = 0; f = 1 MHz
0.65 0.9 pF
Diode
Cd
diode capacitance
f = 1 MHz; VR = 0
rD
diode forward resistance IF = 2 mA; f = 100 MHz; note 3
1.1
pF
0.7
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
d
s
handbook, halfpage
s
d
g, a
c
SOT143B
MBL027
c
g, a
SOT143R
Fig.3 Simplified diagram.
1999 Nov 18
4
 

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