BF1009 View Datasheet(PDF) - Siemens AG
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Description
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BF1009 Datasheet PDF : 4 Pages
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BF 1009
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 300 µA, -VG1S = 4 V, - VG2S = 4 V
Gate 1 source breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
Gate 2-source pinch-off voltage
VDS = 9 V, ID = 100 µA
V(BR)DS
16
-
-V
±V(BR)G1SS 8
-
12
±V(BR)G2SS 9
-
16
+IG1SS
-
-
60 µA
±IG2SS
-
-
50 nA
IDSS
-
- 500 µA
IDSO
8
10
- mA
VG2S(p)
-
0.9
-V
AC characteristics
Forward transconductance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 kHz
Gate 1-input capacitance (self biased)
VDS = 9 V, VG2S = 6 , f = 1 MHz
Output capacitance (self biased)
VDS = 9 V, VG2S = 6 , f = 100 MHz
Power gain (self biased)
VDS = 9 V, VG2S = 6 , f = 800 MHz
Noise figure (self biased)
VDS = 9 V, VG2S = 6 , f = 800 MHz
Gain control range (self biased)
VDS = 9 V, VG2S = 1 V, f = 800 MHz
gfs
Cg1ss
Cdss
Gps
F800
∆Gps
-
24
- mS
-
2.1 2.5 pF
-
0.9
-
-
22
- dB
-
1.4
-
40 50
-
SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109998-1-1919-081
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