PZTA42 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

PZTA42

NPN Silicon High-Voltage Transistors

Infineon Technologies 

PZTA 42, PZTA 43

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1 mA, IB = 0

PZTA 42

300 -

PZTA 43

200 -

V

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 100 µA, IB = 0

PZTA 42

300 -

-

PZTA 43

200 -

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

Collector cutoff current

VCB = 200 V, IE = 0

VCB = 160 V, IE = 0

PZTA 42

PZTA 43

Collector cutoff current

VCB = 200 V, IE = 0 , TA = 150 °C

VCB = 160 V, IE = 0 , TA = 150 °C

PZTA 42

PZTA 43

Emitter cutoff current

VEB = 3 V, IC = 0

DC current gain 1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

PZTA 42

PZTA 43

V(BR)EBO 6

ICBO

-

-

ICBO

-

-

IEBO

-

hFE

25

40

40

VCEsat

-

-

-

-

nA

-

100

-

100

µA

-

20

-

20

-

100 nA

-

-

-

-

-

-

-

V

-

0.5

-

0.4

Base-emitter saturation voltage 1)

IC = 20 mA, IB = 2 mA

VBEsat

-

-

0.9

1) Pulse test: t < 300µs; D < 2%

2

Oct-14-1999

Share Link: