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BD137-10 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
BD137-10 NPN power transistor. Philips
Philips Electronics Philips
BD137-10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN power transistors
Product specification
BD135; BD137; BD139
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in hi-fi amplifiers and television circuits.
PINNING
PIN
1
2
3
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
handbook, halfpage
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD135
BD137
BD139
collector-emitter voltage
BD135
BD137
BD139
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 70 °C
MIN.
MAX.
UNIT
45
V
60
V
100
V
45
V
60
V
80
V
5
V
1.5
A
2
A
1
A
8
W
65
+150
°C
150
°C
65
+150
°C
1999 Apr 12
2
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