OM6508SA Datasheet PDF - Omnirel Corp => IRF
Part Name
Description
MFG CO.
Other PDF
no available.
PDF
OM6508SA Datasheet PDF :
500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package
DESCRIPTION
This power module includes an IGBT power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Free Wheeling Diode
• Ceramic Feedthroughs Available
|
|
Part Name
Description
PDF
MFG CO.
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE
Omnirel Corp => IRF
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Share Link: