OM6501ST Datasheet PDF - Omnirel Corp => IRF
Part Name
Description
MFG CO.
Other PDF
no available.
PDF
OM6501ST Datasheet PDF :
500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
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Part Name
Description
PDF
MFG CO.
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
Omnirel Corp => IRF
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE
Omnirel Corp => IRF
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
Foshan Blue Rocket Electronics Co.,Ltd.
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