datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : 2SA1270
KEC
KEC
Description : Silicon PNP Transistor Epitaxial PLANAR Type (PCT Process)

Silicon PNP Transistor Epitaxial PLANAR Type (PCT Process)

Part Name(s) : 2SA1272
KEC
KEC
Description : Silicon PNP Transistor Epitaxial PLANAR Type (PCT Process)

Silicon PNP Transistor Epitaxial PLANAR Type (PCT Process)

Part Name(s) : 2SB1429 B1429
Toshiba
Toshiba
Description : Transistor Silicon PNP Epitaxial Type (PCT Process)

Transistor Silicon PNP Epitaxial Type (PCT Process)

Power Amplifier Applications

Features
• Complementary to 2SD2155
• Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

Part Name(s) : RN49A1FE
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a Bias Resistor into a Transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and saves assembly costs.

Part Name(s) : RN4981FS
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

• Two devices are incorporated into a fine pitch small mold (6-pin) package.
• Incorporating a Bias Resistor into a Transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.

Part Name(s) : RN4990FS
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

• Two devices are incorporated into a fine pitch small mold (6-pin) package.
• Incorporating a Bias Resistor into a Transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.

Part Name(s) : RN4986FE
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

 Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
 Incorporating a Bias Resistor into a Transistor reduces parts count.
  Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

Part Name(s) : 2SC108A 2SC109A
Toshiba
Toshiba
Description : Silicon NPN Epitaxial Type(PCT Process)

Silicon NPN Epitaxial Type(PCT Process)

Part Name(s) : RN4901FE
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.

• Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
• Incorporating a Bias Resistor into a Transistor reduces parts count.
  Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

 

Part Name(s) : RN4904FE
Toshiba
Toshiba
Description : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a Bias Resistor into a Transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.

 

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]