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DESCRIPTION
This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots. Fully compliant to GSFC EEE-INST-002 reliability, screening and radiation hardness assurance requirements for space flight projects

FEATURES
• JEDEC registered 2N2369
• TID level screened per MIL-PRF-19500
• Also available with ELDRS testing to 0.01 Rad(s)/ sec
• MKCR / MHCR chip die available
• RHA (Radiation hardness assured) lot by lot
   validation testing via ELDR 0.1 Rad (SI)/sec dose rate

APPLICATIONS / BENEFITS
• Rad-hard power supplies
• Rad-hard motor controls
• General purpose switching
• Instrumentation Amps
• EPS Satellite switching power applications

Description
The 54AC and 54ACT series represent over 60 product types with different high-speed CMOS functions, specifically designed to meet the radiation requirements of the aerospace industry. They include a large set of gates, flip-flops, multiplexers, counters, bus interfaces, and several other functions. Their radiation hardness, immunity from single event latch-up (SEL) and single event upset (SEU), and housing in hermetic packages make them suitable for the most difficult environmental conditions. The complete specification for each type is available from the DSCC web site: www.dscc.dla.mil. STMicroelectronics guarantees full compliance of qualified parts with these DSCC specifications.

Features
■ 2 to 6 V operating voltage
■ High speed TPD = 4.5 ns (typ.)
■ Low DC power dissipation: 8 µA max.
■ Symmetrical 24 mA output characteristics
■ High noise immunity: 28% of min. VCC
■ Power-down input protection
■ Balanced propagation delays
■ Improved electrical latch-up immunity
■ Controlled rise and fall times
■ Operating temperature: - 55 to 150 °C
■ Hermetic packages
■ Rad-hard: 300 kRad TID at any Mil1019 dose rates
■ SEL immune to 110 MeV/cm²/mg LET ions
■ RHA QML-V qualified
■ Same die and electrical specification for engineering and flight models

DESCRIPTION:
The MSK 0002RH is a general purpose current amplifier. It is the industry wide RAD tolerant replacement for the LH0002. The device is ideal for use with an operational amplifier in a closed loop configuration to increase current output. The MSK 0002RH is designed with a symmetrical output stage that provides low output impedances to both the positive and negative portions of output pulses.

FEATURES:
• Radiation Hardened to 100 Krads(Si) (Method 1019.7 Condition A)
• Radiation Hardened LH0002 Replacement
• High Input Impedance-180KΩMin
• Low Output Impedance-10ΩMax
• Low Harmonic Distortion
• DC to 30 MHz Bandwidth
• Slew Rate is Typically 400 V/μS
• Operating Range from±5V to ±20V
• Available to DSCC SMD 5962-78013
• Equivalent Non Rad Hard Device MSK 0002

TYPICAL APPLICATIONS
• High Speed D/A Conversion
• 30MHz Buffer
• Line Driver
• Precision Current Source

DESCRIPTION:
The MSK6000RH is a radiation hardened dual 5A high side switch module with a current sensing output. Each switch is independently controlled with 5V logic and can switch up to 5A maximum current. Each switch has its own independent ground reference. The current monitor outputs provide a simple method for monitoring the current in each switch. The device is designed for space applications where quality, performance and low weight are a must. The MSK6000RH is packaged in a hermetic 26 pin flatpack.

FEATURES:
• Manufactured using LINEAE TECHNOLOGY RH 6105 Dice
• Radiation Hardened to 100Krad(Si) (Method 1019 Condition A)
• 100V RAD HARD MOSFETs
• Dual Configuration
• Low Profile Surface Mount Flatpack
• 12V to 44V Input Voltage Range
• 5V to 36V VCC Supply Range
• 5A Max. Rating for Rad Hard Switches
• Contact MSK for MIL-PRF-38534 Qualification Status

TYPICAL APPLICATIONS
• High Side Switch Drivers
• High Level Switching
• Space Applications
• Circuit Breaker

Description
Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 23A, -100V, rDS(ON) = 0.140Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-RAD Specifications to 100K RAD (Si)
    - Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
    - Performance Permits Limited Use to 3000K RAD (Si)
• Gamma Dot
    - Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD (Si)/s Typically
• Neutron
    - Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

Rad-hard high voltage CMOS logic series

Description
The HCC40xxx and HCC45xxx series are composed of over 70 types of high voltage CMOS
functions, offering a set of highly noise tolerant gates, Flip-Flops, multiplexers, counters, bus
interfaces and several other functions. The radiation hardness, the single event latch-up
(SEL) and the single event upset (SEU) immunity and the housing in hermetic packages of all types
of both series make them usable in the most difficult environmental conditions.

Features
■ 3 to 20 V max operating voltage
■ Bufferized inputs and outputs
■ Standardized symmetrical outputs characteristic
■ 50 ns typical propagation delays
■ 100 nA max 25 °C input current
■ 100% tested 20 V quiescent current
■ 5-10-15 V parametric testing
■ Hermetic packages
■ Rad-hard 100 kRad TID at 11rad/sec dose rate
■ SEL-SEU immune to 72 MeV/cm²/mg LET ions
■ ESCC qualified

Description
The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hard ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 8A, 100V, rDS(ON) = 0.180Ω
• Total Dose
  - Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
  - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
  - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
  - 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²

Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 12A, 200V, RDS(on) = 0.255Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End-Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 5.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2

Features
• 23A, 200V, RDS(on) = 0.115Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 12.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2

Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 31A, 200V, RDS(on) = 0.080Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9 RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 18.0nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 1E13 Neutrons/cm2
    - Usable to 1E14 Neutrons/cm2