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Part Name(s) : N3PF06 STN3PF06
ST-Microelectronics
STMicroelectronics
Description : P-channel 60 V - 0.20 Ω- 2.5 A - SOT-223 STripFET™ II Power MOSFET

Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Application
■ Switching applications

Part Name(s) : N3PF06 STN3PF06
ETC
Unspecified
Description : P-channel 60 V - 0.20 Ω- 2.5 A - SOT-223 STripFET™ II Power MOSFET

[ST-Microelectronics]

Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Application
■ Switching applications

ST-Microelectronics
STMicroelectronics
Description : N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.07 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC-DC & DC-AC COVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
■ SYNCHRONOUS RECTIFICATION

Part Name(s) : STN1NF10
ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 100V - 0.7Ω - 1A SOT-223 STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.7 Ω
■ EXCEPTIONAL dv/dt CAPABILITY

APPLICATIONS
■ DC-DC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)

Part Name(s) : STN4NF03L_06
ST-Microelectronics
STMicroelectronics
Description : N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET™ II Power MOSFET

Description
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General features
■ Low threshold drive

Applications
■ Switching application

Description : N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.039Ω
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ SYNCHRONOUS RECTIFICATION

Part Name(s) : STT2PF60L
ST-Microelectronics
STMicroelectronics
Description : P-channel 60V - 0.20 Ω - 2A SOT23-6L STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.20
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
Power MANAGEMENT IN PORTABLE/DESKTOP PCs
■ CELLULAR

Part Name(s) : STT3PF20V
ST-Microelectronics
STMicroelectronics
Description : P-channel 20V - 0.14 Ω - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.14 Ω (@4.5V)
■ TYPICAL RDS(on) = 0.20 Ω (@2.7V)
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ CELLULAR

Description : Power MOSFET 700 mA, 240 V, N−Channel, SOT−223

Power MOSFET 700 mA, 240 Volts N–Channel SOT–223

This Power MOSFET is designed for high speed, low loss Power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium Power surface mount applications.

• Silicon Gate for Fast Switching Speeds
• High Voltage – 240 Vdc
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
   The formed leads absorb thermal stress during soldering,
   eliminating the possibility of damage to the die.

Part Name(s) : STN3NE06L
ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFETPower MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.10 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100 % AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

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