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The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Power MOSFET(N-Channel enhancement mode Power MOSFET)

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-Channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-Channel and P-channel
• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 10¹³Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10⁹
• Single N-Channel MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-Channel and  P-channel transistor pair intended for a broad range of analog applications.  These enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-Channel and P-channel
• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 10¹³Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10⁹
• Single N-Channel MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

RF Power MOSFET N-Channel ENHANCEMENT MODE

RF Power MOSFET N-Channel ENHANCEMENT MODE

N-Channel Power MOSFET

• Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply, Motor Control and Amplifier Applications
• Screening Options Available

N-Channel Power MOSFET

N-Channel SILICON Power MOSFET

GENERAL DESCRIPTION
The ALD1103 is a monolithic dual N-Channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-Channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.

FEATURES
• Thermal tracking between N-Channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-Channel & P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013 Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Matched N-Channel and matched P-channel in one package
• RoHS compliant