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Part Name(s) : STD2NB80-1
ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESHMOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR SMD DPAK VERSION CONTACT SALES OFFICE

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STD2NB80
ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESHMOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS)

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMESH™II MOSFET

DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 0.75Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
■ ADD SUFFIX “-1” FOR ORDERING IN IPAK

APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES (SMPS)
■ CFL

ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK PowerMESHMOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ Process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

 

TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL

 

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT

Description : N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESHMOSFET

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.47 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STD1NC60
ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 7Ω - 1.4A - DPAK/IPAK PowerMESH™II MOSFET

DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 7 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY
■ TYPICAL RDS(on) = 0.23 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Description : N-CHANNEL 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET

N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH™ MOSFET

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 4.4Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGERS
■ SWITH MODE POWER SUPPLIES (SMPS)

ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMESH™II MOSFET

DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 4 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

ON-Semiconductor
ON Semiconductor
Description : Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

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