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1. 600V N-Channel VDMOS
2. When you need to use anti-static and storage
3. meet RoHS and other environmental directives

Main purpose
1. Mainly used for charger, LED driver, PC-assisted
2. Power and other power switching circuit

 Main Features
1. Switching speed
2. On-state resistance, input capacitance small

Package Outline Package Outline
1. TO-220

Reference datasheet : N-Channel-Power-MOSFET" target="_blank">NDF03N60Z, NDD03N60Z

75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC.

Features
• 75A, 600V, TC= 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ= 150^oC
• Short Circuit Rating
• Low Conduction Loss

75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC.

Features
• 75A, 600V, TC= 25^oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . .  100ns at TJ= 150^oC
• Short Circuit Rating
• Low Conduction Loss

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
   
Features
• 6.2A, 600V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount
        Components to PC Boards”
   

General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS

Features
■ 4.5A,600V,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

600V N-Channel MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 8.5 nC (Typ.)
□ BVDSS=600V,ID=2A
□ Lower RDS(on) : 5Ω (Max) @VG=10V
□ 100% Avalanche Tested

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 5.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 7.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability