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Overview
The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

Overview
The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
    2.5V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

[NanoAmp Solutions, Inc.]

The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
    2.5V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

Overview
The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power. It is designed to be identical in operation and interface to standard 6T SRAMS.

Features
• Dual voltage for Optimum Performance:
    VccQ - 2.7 to 3.6 Volts
    Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ)
• Fast random access time
    70ns at 2.7V
• Very fast page mode access time
    25ns page cycle and access
• Very low standby current
    80µA V (Typical)
• Very low operating current
    1.0mA at 1µs (Typical)
• Simple memory control
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• PAR and RMS Power saving modes
• Deep sleep option
• TTL compatible three-state output driver

The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and Ultra-Low
Power
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0μA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power

Features
• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 4.0μA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V and 1μs (Typical)

Features
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0μA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1μs (Typical)

Overview
The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users.

Features
• Dual voltage for Optimum Performance:
    Vccq - 2.3 to 3.6 Volts
    Vcc - 1.4 to 2.2 Volts
• Very low standby current
    0.5µA at 1.8V and 37 deg C
• Very low operating current
    1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
    0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.2V
• Special Processing to reduce Soft Error Rate (SER)
• Automatic Power down to standby mode

Overview
The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power.

Features
• Single Wide Power Supply Range
    2.2 to 3.6 Volts
• Very low standby current
    2.0µA at 3.0V (Typical)
• Very low operating current
    1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.5V
• Very fast output enable access time
    25ns OE access time
• Automatic Power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available

Overview
The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power.
   
Features
• Single Wide Power Supply Range
    2.3 to 3.6 Volts
• Very low standby current
    4.0µA at 3.0V (Typical)
• Very low operating current
    2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
    0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
    Single Chip Enable (CE)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.8V
• Very fast output enable access time
    25ns OE access time
• Automatic Power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available