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Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction

Overview
The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit Power SAVER TECHNOLOGY

Overview
The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
    2.5V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction

[NanoAmp Solutions, Inc.]

The N04Q16yyC2B are Ultra-Low Power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide Ultra-Low active and standby Power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
    2.5V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

NANOAMP
NanoAmp Solutions, Inc.
Description : 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM w/ Page Mode Operation (2M x 16 bit)

Overview
The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power. It is designed to be identical in operation and interface to standard 6T SRAMS.

Features
Dual voltage for Optimum Performance:
    VccQ - 2.7 to 3.6 Volts
    Vcc - 2.7 to 3.6 Volts (VccVccQ)
• Fast random access time
    70ns at 2.7V
• Very fast page mode access time
    25ns page cycle and access
• Very low standby current
    80µA V (Typical)
• Very low operating current
    1.0mA at 1µs (Typical)
• Simple memory control
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic Power down to standby mode
• PAR and RMS Power saving modes
• Deep sleep option
• TTL compatible three-state output driver

Part Name(s) : N04L163WC2A
ETC
Unspecified
Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM

The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and Ultra-Low
Power
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0μA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)

Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power

Features
• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 4.0μA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1μs (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V and 1μs (Typical)

ETC
Unspecified
Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Features
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0μA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1μs (Typical)
AMI
AMI Semiconductor
Description : 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit

Overview
The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users.

Features
Dual voltage for Optimum Performance:
    Vccq - 2.3 to 3.6 Volts
    Vcc - 1.4 to 2.2 Volts
• Very low standby current
    0.5µA at 1.8V and 37 deg C
• Very low operating current
    1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
    0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.2V
• Special Processing to reduce Soft Error Rate (SER)
• Automatic Power down to standby mode

NANOAMP
NanoAmp Solutions, Inc.
Description : 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit

Overview
The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power.

Features
• Single Wide Power Supply Range
    2.2 to 3.6 Volts
• Very low standby current
    2.0µA at 3.0V (Typical)
• Very low operating current
    1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.5V
• Very fast output enable access time
    25ns OE access time
• Automatic Power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available

Description : 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview
The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and Ultra-Low Power.
   
Features
• Single Wide Power Supply Range
    2.3 to 3.6 Volts
• Very low standby current
    4.0µA at 3.0V (Typical)
• Very low operating current
    2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
    0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
    Single Chip Enable (CE)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Low voltage data retention
    Vcc = 1.8V
• Very fast output enable access time
    25ns OE access time
• Automatic Power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available
   

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