TIP102 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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TIP102 Datasheet PDF : 5 Pages
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TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP105/106/107
Equivalent Circuit
C
B
1
TO-220
1.Base 2.Collector 3.Emitter
R1
R1 @ 10kW
R2 @ 0.6kW
R2
E
October 2008
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage : TIP100
: TIP101
: TIP102
Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
60
80
100
60
80
100
5
8
15
1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
© 2007 Fairchild Semiconductor Corporation
TIP100/TIP101/TIP102 Rev. 1.0.0
1
www.fairchildsemi.com
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