K2SB632 View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
View to exact match
K2SB632 Datasheet PDF : 9 Pages
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Ordering number:341G
Features
· High collector dissipation and wide ASO.
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter
2 : Collector
3 : Base
Specifications
JEDEC : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Tc=25˚C
2SB632, D612
2SB632K, D612K Unit
(–)25
(–)35 V
(–)25
(–)35 V
(–)5 V
(–)2 A
(–)3 A
1W
10 W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(–)10µA, IE=0
B632, D612
(–)25
V
B632K, D612K
(–)35
V
Collector-to-Emitter Brakdown Voltage
V(BR)CEO IC=(–)1mA, RBE=∞
B632, D612
(–)25
V
B632K, D612K
(–)35
V
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)EBO
ICBO
IEBO
IE=(–)10µA, IC=0
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
(–)5
V
(–)1 µA
(–)1 µA
* : The 2SB632/2SD612 are classified by 500mA hFE as follows : 60 D 120 100 E 200 160 F 320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
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