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K120 Просмотр технического описания (PDF) - Knox Semiconductor, Inc

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K120 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE Knox-Semiconductor
Knox Semiconductor, Inc Knox-Semiconductor
K120 Datasheet PDF : 1 Pages
1
LOW LEVEL ZENER DIODES
VERY LOW VOLTAGE, LOW LEAKAGE
K120 - K510
Conserves battery life
Unique manufacturing process
Provides lowest reverse leakage currents
Low impedance at currents specified at 10 mA and below
PART
NUMBER
K120
K150
K180
K210
K240
K270
K300
K330
K360
K390
K430
K470
K510
NOMINAL
ZENER VOLTAGE
Vz @ Iz = 10 mA
(Vdc)
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
DYNAMIC IMPEDANCE
MAX Zz
MAX Zzk
@ IZ = 10 mA
@ IZ = 1 mA
(OHMS)
(OHMS)
20
125
20
125
20
125
20
125
20
125
20
125
20
125
20
125
20
125
20
125
25
135
25
135
25
135
REVERSE CURRENT
@ 25° C
MAX Ir
Vr
(µA)
(Vdc)
.05
0.4
.05
0.5
.05
0.6
.05
0.9
.05
1.2
.05
1.7
.05
1.9
.05
2.2
.05
2.5
.05
2.7
.05
3.1
.05
3.5
.05
3.8
Package Style
DC Power Dissipation
Operating Temperature (Topr)
Storage Temperature (Tstg)
Voltage Tolerance:
Other package syles available
@ Ta = 50° C
Standard Device
DO-7
250 mW
-65 to + 175° C
-65 to + 200° C
±10%
P.O. BOX 609 ROCKPORT, MAINE 04856 207-236-6076 FAX 207-236-9558
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