2SK2826
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
VGS = 4.0 V
10
5
VGS = 10 V
0
ID = 25 A
- 50
0
50 100 150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
•
SWITCHING CHARACTERISTICS
10 000
tr
10 000
Ciss
Coss
1 000
tf
td(off)
1 000
100
td(on)
Crss
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
10
0.1
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1
10
100
ID - Drain Current - A
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
8
VGS
60
VDD = 48 V
6
30 V
12 V
40
4
20
2
VDS
0
50
100
150
200
QG - Gate Charge - nC
Data Sheet D11273EJ2V0DS00
5