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K2826-S View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
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K2826-S
NEC
NEC => Renesas Technology NEC
K2826-S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
RDS(on)1 = 6.5 m(MAX.) (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 m(MAX.) (VGS = 4.0 V, ID = 35 A)
Low Ciss : Ciss = 7200 pF (TYP.)
Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK2826
2SK2826-S
2SK2826-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±70
A
±280
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to + 150 °C
IAS
70
A
EAS
490
mJ
Notes 1. PW 10 µ s, Duty cycle 1 %
2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
The mark shows major revised points.
©
Printed in Japan
1998
 

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