datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3435 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3435 Datasheet PDF : 4 Pages
1 2 3 4
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 14 mMAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 22 mMAX. (VGS = 4.0 V, ID = 40 A)
5 Low Ciss: Ciss = 3200 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
2SK3435-S
TO-220AB
TO-262
2SK3435-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
±80
A
ID(pulse)
±320
A
PT
84
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg
–55 to +150
°C
IAS
31
A
EAS
96
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14604EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
Date Published March 2000 NS CP(K)
Printed in Japan
©
1999, 2000
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]