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J109 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
fabricante
J109
Fairchild
Fairchild Semiconductor Fairchild
J109 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
1
TO-92
1. Drain 2. Source 3. Gate
2
1 SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
IGF
Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108
109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
108
109
110
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Csg(off)
Source-Gate Off Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VDS = 0, VGS = 0, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
Min. Max. Units
-25
V
-3.0
nA
-200
nA
-3.0
-10
V
-2.0 -6.0
V
-0.5 -4.0
V
80
mA
40
mA
10
mA
8.0
12
18
85
pF
15
pF
15
pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
 

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