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J110 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
fabricante
J110
Philips
Philips Electronics Philips
J110 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to Tamb = 50 °C
MIN.
65
MAX.
±25
25
25
50
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
IDSS
IGSS
IDSX
RDSon
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
drain current
J108
J109
J110
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
CONDITIONS
IG = 1 µA; VDS = 0
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 15 V
VGS = 15 V; VDS = 0
VGS = 10 V; VDS = 5 V
VGS = 0; VDS = 100 mV
MIN.
3
2
0.5
80
40
10
TYP.
MAX.
25
10
6
4
UNIT
V
V
V
V
V
mA
mA
mA
3
nA
3
nA
8
12
18
1996 Jul 30
3
 

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