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J110 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
fabricante
J110
Philips
Philips Electronics Philips
J110 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
High speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (<8 for J108).
APPLICATIONS
Analog switches
Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN
SYMBOL
1
g
2
s
3
d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
d
g
s
MAM197
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS
drain current
J108
J109
J110
Ptot
total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
±25 V
3
10 V
2
6
V
0.5 4
V
80
mA
40
mA
10
mA
400 mW
1996 Jul 30
2
 

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