J111 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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J111 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate forward current (DC)
Total power dissipation
±VDS
−VGSO
−VGDO
IG
max.
max.
max.
max.
up to Tamb = 50 °C
Storage temperature range
Junction temperature
Ptot
max.
Tstg
Tj
max.
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate reverse current
−VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 5 V; −VGS = 10 V
Drain saturation current
VDS = 15 V; VGS = 0
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
Gate-source cut-off voltage
VDS = 5 V; ID = 1 µA
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
−IGSS
−IDSX
IDSS
−V(BR)GSS
−VGS off
RDSon
max.
max.
min.
min.
min.
max.
max.
J111
1
1
20
40
3
10
30
40 V
40 V
40 V
50 mA
400 mW
−65 to + 150 °C
150 °C
250 K/W
J112 J113
1
1 nA
1
1 nA
5
2 mA
40
40 V
1
0.5 V
5
3V
50
100 Ω
July 1993
3
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